Novel UV devices fabrication via vertical ZnO nanowires patternize growth technology

Chen I-CHERNG
Industrial Technology Research Institute

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     Last modified: February 22, 2006

Abstract
Novel UV devices fabrication via vertical ZnO nanowires patternize growth technology
Ting-Jen Hsueh, 1 Cheng-Liang Hsu, 2 Chih-Han Chen1, I-Cherng Chen 3*, and Shoou-Jinn Chang, 1
1 Institute of Microelectronics &, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
2 Departments of Electrical Engineering & Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 24301, Taiwan
3 Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
KEYWORDS: ZnO, nanowires, UV photodetector, FESEM
Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template byself-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520°C. It was found that length of these ZnO nanowires was around 2.0μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5. On the other, One-dimensional single nanowires /nanorods have also attracted great attention on nanoscale electronic and optoelectronic devices. We report crabwise growth of ZnO nanowires on ZnO:Ga/glass templates by self-catalyzed VLS method. UV photodetectors were then fabricated using these ZnO single crystal nanowires. With light of wavelength 362 nm was incident, the measured responsivities were 0.015 and 0.03 A/W when the crabwise ZnO nanowire photodetector was biased at 10 and 15 V, respectively. Furthermore, a rejection ratio of approximately 10 was obtained for the crabwise ZnO nanowire photodetector with an applied bias of 10V.